2n7000csm * pulse width limited by maximum junction temperature. n?channel enhancement mode mos transistor features ?v (br)dss = 60v ? rds (on) = 5 ?i d = 200ma ? hermetic ceramic surface mount package ? screening options available v ds drain ? source voltage v gs gate ? source voltage i d drain current @ t case = 25c i dm pulsed drain current * p d power dissipation @ t case = 25c t j operating junction temperature range t stg storage temperature range 60v 40v 200ma 500ma 300mw ?55 to 150c ?55 to 150c mechanical data dimensions in mm (inches) absolute maximum ratings (t case = 25c unless otherwise stated) sot23 ceramic (lcc1 package) 21 0.51 0.10 (0.02 0.004) 0.31 (0.012) 1.91 0.10 (0.075 0.004) 3.05 0.13 (0.12 0.005) 2.54 0.13 (0.10 0.005) 0.76 0.15 (0.03 0.006) 1.02 0.10 (0.04 0.004) 1.40 (0.055) max. a 0.31 (0.012) rad. rad. a = 3 pad 1 ? gate underside view pad 2 ? source pad 3 ? drain semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. document number 7022 issue: 1
parameter min. typ. max. unit r ja thermal resistance, junction to ambient 416 c/w v (br)dss drain ? source breakdown voltage v gs(th) gate threshold voltage i gss gate ? body leakage current i dss zero gate voltage drain current i d(on)* on?state drain current r ds(on)* drain ? source on resistance v ds(on)* drain ? source on voltage g fs* forward transconductance c iss input capacitance c oss output capacitance c rss reverse transfer capacitance t on turn?on time t off turn?off time 2n7000csm electrical characteristics (t case = 25c unless otherwise stated) v gs = 0v i d = 10 a v ds = v gs i d = 0.25ma v gs = 20v v ds = 0v v ds = 60v v gs = 0v t case = 125c v ds 2v ds(on) v gs = 4.5v v gs = 10v i d = 0.5a t case = 125c v gs = 4.5v i d = 75ma v gs = 10v i d = 0.5a v gs = 10v i d = 0.5a v ds = 25v v gs = 0v f = 1mhz v dd = 30v v gen = 10v r l = 150 r g = 25 i d = 0.2a 60 70 0.8 3.0 -10 1.0 1.0 75 5 9 0.4 2.5 100 60 25 5 10 10 v na a ma ma v ms pf ns static characteristics dynamic characteristics switching characteristics * pulse test: pw = 80 s , ? 1% parameter test conditions min. typ. max. unit semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. document number 7022 issue: 1
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